Structural and electrical properties of the arsenic planar-doped Hg 1− xCd xTe epilayers grown on p-Cd 0.96Zn 0.04Te substrates

Abstract

Double-crystal X-ray rocking curve (DCXRC), transmission electron microscopy (TEM), secondary-ion mass-spectroscopy (SIMS), and Hall-effect measurements were performed in order to investigate the structural and the electrical properties of arsenic planar-doped Hg 1− x Cd x Te epilayers grown on Cd 0.96Zn 0.04Te (2 1 1) B substrates by molecular beam epitaxy. From the DCXRC analyses, the grown Hg 1− x Cd x Te layers were found to be very high-quality epitaxial films. The TEM measurements showed that high-quality Hg 1− x Cd x Te epitaxial layers with abrupt interfaces were grown on the Cd 0.96Zn 0.04Te substrates. A doping profile of the arsenic dopant was obtained from SIMS measurements. While all of the as-grown arsenic conventional-doped Hg 1− x Cd x Te epilayers were n-type, some of the arsenic planar-doped Hg 1− x Cd x Te thin films were p-type. These results indicate that the arsenic planar-doped Hg 1− x Cd x Te thin films hold promise for applications in infrared focal-plane array photodetectors and photodiodes.