Abstract
Electrical properties and donor ionization energy level E D in Te-doped n-Al x Ga 1 -x As 0.003Sb 0.97 (0< x<0.8) grown by MBE have been investigated. The electron concentration of Te-doped AlGaAsSb was found to be strongly affected by the Al composition and by the donor energy level E D for Te. E D takes the form of an inverted “W” with a maximum at the Γ-L direct-indirect band crossover and L-X crossover. The structural characteritics of the AlGaAsSb/GaAs have been studied by double-crystal X-ray diffraction. Results show that the lattice misfit strain was not fully relaxed by the generation of mismatch dislocations.
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