Abstract
Electrical properties and the donor energy level in Se-doped n-Ga1−xAlxAs (0⩽x⩽0.82) prepared by metalorganic chemical vapor deposition have been investigated. The van der Pauw technique was used to measure the electrical properties of n-Ga1−xAlxAs. The resistivity and electron concentration of Se-doped Ga1−xAlxAs were found to be strongly affected by the donor energy level for Se. The donor energy levels ED of Se in Ga1−xAlxAs was found to remain constant at 0.003 eV for x<0.25. For x≳0.25, ED takes the form of an inverted V with a maximum at the direct-indirect band crossover.
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