Abstract
Electrical properties and the impurity energy levels in Se-doped n-Ga(l-x)AlxAs (0≤x≤0.82) and Zn-doped p-Ga1-xAlxAs (0≤x≤1) prepared by metalorganic chemical vapor deposition have been investigated. The van der Pauw technique was used to measure the electrical properties of Ga(l-x)AlxAs. The resistivity and carrier concentrations of Ga(1-x)AlxAs were found to be strongly affected by the impurity energy levels for Se and Zn. Tne donor energy levels, ED, of Se in Ga(1-x)A1xAs was found to take the form of an inverted V with a maximum at the direct-indirect band crossover while the acceptor energy levels, EA, of Zn was found to increase with increasing A1 mole fraction.© (1982) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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