Abstract
A model is developed for the formation of porous intragranular architectonics of nanostructured polycrystalline layers of lead chalcogenides for photodetectors and IR emitters. The layers are obtained under the conditions of thermal evaporation in a quasi-closed volume by the “hot wall” method followed by sensitizing heat treatment in an iodine-containing atmosphere. Model concepts are developed considering the experimental results of studying the intragranular structure of lead chalcogenides through original combined AFM methods over the cross-section of porous grains (cores) encapsulated by an oxide shell (lateral force microscopy and local tunneling I–V spectroscopy).
Highlights
In the last several decades, a research area based on polycrystalline chalcogenides [22,23,24,25,26,27,28,29,30,31,32,33] and their solid solutions for IR photodetectors and emitters [21,22,23,24,25,26] has been successfully developing
The optimization of technological processes is accompanied by the sensitization of materials and the creation of protective oxide shells [28,29,30,31,32] consisting of different chemical compounds, namely PbOx, PbSeO3, bi- and tetra-oxyselenites and oxyselenates (2PbO·PbSeO3, 4PbO·PbSeO3) [29]
The aim of this work is to summarize research in several of our published works, and to develop a new model of formation processes for porous intragranular architectonics [9,10,11] of photodetectors and IR emitters based on nanostructured polycrystalline lead chalcogenide layers, obtained under conditions of thermal evaporation in a quasi-closed volume by the “hot wall” method
Summary
In the last several decades, a research area based on polycrystalline chalcogenides [22,23,24,25,26,27,28,29,30,31,32,33] and their solid solutions for IR photodetectors and emitters [21,22,23,24,25,26] has been successfully developing. Effective devices based on nanostructured polycrystalline layers of binary compounds, and solid solutions based on them, can be obtained in the spectral range of 2.5 μm. The advantages of these devices include high operating speeds, small overall and weight parameters, low power consumption, and operation at room temperature [31,33]
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