Abstract

Features and basic technological methods of formation of thin layers of semiconductor materials in a vacuum with the method of thermal spraying in a quasi-closed volume are analyzed. The disadvantages of thermal spraying of thin films of multicomponent semiconductor compounds in an open vacuum are indicated. The designs of special collapsible evaporator chambers for thermo-vacuum sputtering in a quasi-closed volume containing the raw material and substrate in quasi-isolated conditions are presented. They allow to create and manage the necessary temperature corrections between the evaporator, lining, walls and other structural elements. The designs of special collapsible evaporator chambers for thermo-vacuum sputtering in a quasi-closed volume containing the raw material and substrate in quasi-isolated conditions are presented. They allow to create and manage the necessary temperature corrections between the evaporator, lining, walls and other structural elements. It is shown that the spatial temperature distribution in the discussed constructs provides the evaporation (sublimation) of the source material, the reflection of vapor from the heated walls, the intensive exchange interaction between the gas phase and the condensation surfaces and the prevailing condensation on the substrate surface, which contributes to the diffusion mechanism of the transfer of matter and to the thermodynamically balanced growth process for films. It is shown that for all modifications, to a greater or lesser extent, the conditions for the isolation of the localized volume and the equilibrium of the condensation process are fulfilled by creating the necessary temperature gradient. It is indicated that it is problematic to use such structures for mass production due to their complexity and technological features. That is why the method of thermal spraying of thin films in the quasi-closed volume is most often used in the production of epitaxial monocrystalline layers for scientific research and experimental development, and for industrial production it is very effective to develop methods for obtaining thin films, which from one hand combine universality of thermal spraying in opened vacuum and from another hand allow to bring the processes of evaporation (sublimation) and condensation closer to thermodynamic equilibrium, for example, various types of “hot walls”. It is noted that the analyzed methods or their modifications are these necessary methods of creating thin-film semiconductor structures with predetermined properties.

Highlights

  • In the first part of this review (Aksimentyeva et al, 2018), a brief description of the methods to obtain thin films of inorganic semiconductors, in particular, the method of thermal spraying in an open vacuum, were given

  • The general disadvantages of many varieties and modifications of the indicated method are the nonequilibrium conditions of the film's growth, the dependence of the chemical composition of condensates on the rate of spraying, the deviation of the composition of films from stoichiometry. These disadvantages are caused by a significant difference in the temperature of the evaporation or sublimation and of the condensation surface, as well as of the saturated vapour pressure of the individual constituents of two or more component semiconductor compounds

  • The indicated factors lead to the absence of thermodynamic equilibrium, or a controlled deviation from it in the region of growth of the film, which results in uncontrolled changes in physical properties and low reproducibility of the results for sensitive to minor changes in the chemical composition and crystalline structure of the semiconductor materials

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Summary

Article info

Kazimierz Wielki University in Bydgoszcz, 30 Chodkiewicza, Bydgoszcz, 85-064, Poland. The designs of special collapsible evaporator chambers for thermo-vacuum sputtering in a quasiclosed volume containing the raw material and substrate in quasi-isolated conditions are presented. They allow to create and manage the necessary temperature corrections between the evaporator, lining, walls and other structural elements. Проаналізовано особливості та основні технологічні способи формування тонких шарів напівпровідникових матеріалів у вакуумі методом термічного напилення в квазізамкненому об’ємі. Ключові слова: тонкі плівки, напівпровідники, технологічні методи отримання, конденсація у вакуумі, термічне напилення, квазізамкнений об’єм

Introduction
Conclusions
Thin Films and Coatings Deposited by Physical Vapor
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