Abstract

Indium Tin Oxide (ITO) films are widely used on LED chips nowadays for the applications on ohmic contacts and current diffusion layer of p-GaN. However, ITO film is limited by the high cost and poison, it's necessary to be instead. The transparent conductive oxide basic on Zinc oxide is one of the best choices. In this paper, a muti-structure, ITO/GZO films were carried out for an instead of ITO films. It was found ITO (5nm)/GZO films could improve the luminous intensity of LED chips with an ideal turn-on voltage. Compared to the LED chips with ITO films, the luminosity of LED chips with ITO (5nm)/GZO were improved by 5%.

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