Abstract
We have investigated the effect of solvent medium, thermal annealing and dedoping reducing agent such as hydrazine on the performance of poly(3-hexylthiophene) (P3HT) device. The performance of P3HT device varied significantly from different solvents, among them, p-xylene proved to be the best solvent medium, and also hydrazine as dedoping agent made progress in the mobilities by one or two orders of magnitude. Especially, in our experiments, solution preparing, deposition and device measurements were all performed in the air for the application of P3HT without further purification to the ink-jet printing, spin coating or solution casting process for large area and flexible organic thin-film transistors (OTFTs).
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