Abstract
AbstractMetal/silicon interfaces produced by metal thin film deposition on Si substrates have been ion beam mixed using either Ar+ or reactive N2+ low‐energy ion beams. The ion beam mixing (IBM) has been studied by means of ultraviolet photoelectron spectroscopy (UPS), X‐ray photoelectron spectroscopy (XPS), angle resolved XPS (ARXPS) and iterative target testing transformation factor analysis (ITTFA). The IBM using Ar+ is characterized by the formation of metal silicide. For the IBM interfaces using N2+, a fast nitrogen incorporation in the near surface region, followed by a steady state, is observed. Once the saturation is reached, the Me/Si ratio can be varied in a broad range with a nearly constant nitrogen concentration, as a consequence of sputtering, nitruration and mixing effects taking place simultaneously. The comparison of the experimental results with those obtained from TRIDYN simulations that uses pure ballistic mechanisms, suggests that additional rate‐controlling mechanisms, as radiation‐enhanced diffusion processes or the chemical reaction with nitrogen, have to be considered to explain the IBM of Me/Si interfaces by low‐energy Ar+ and N2+ bombardment. Copyright © 2008 John Wiley & Sons, Ltd.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
