The application criterion of model-based optical proximity correction in a low k1 process

Abstract

As k1 factor approaches the theoretical limit, optical proximity correction (OPC) treatments necessary to maintain dimensional tolerances involve increasingly complex correction shapes. This translates to more detailed, or larger mask pattern databases. Moreover, development of exposure tools lags behind the shrinkage of device. This may result in dwindling of process margin in lighographic process despite using all possible resolution enhancement techniques (RETs). Although model-based OPC may lose its effectiveness in case of narrower photolithographic process margin, model-based OPC is recognized as a robust tool to cope with the diversity of layout. By the way, in case of narrower photolithographic process margin, model-based OPC lose its effectiveness. To enhance the usefulness of the OPC, we need to overcome many obstacles. It is supposed that the original layout be designed friendly to lithography to enhance the process margin using aggressive RETs, and is amended by model-based OPC to suppress the proximity effect. But, some constraints are found during an OPC procedure. Ultimately, unless the original lithgraphy friendly layout (LFL) is corrected in terms of pitches and shapes, the lithography process is out of process window as well as makes pattern fidelity poor. This paper emphasizes that the application of model-based OPC requires a particular and unique layout configuration to preserve the process margin in the low k1 process.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.