Abstract
The preparation of the InP anodic oxide and the fabrication of InP metal/insulator/semiconductor field effect transistors (MISFETs) using the anodic oxide as the gate insulator were studied. The anodic oxide prepared under optimum conditions had a very low interface state density, e.g. about 8×10 10 cm -2 eV -1 near midgap. The InP MISFET device fabricated exhibited an electron effective mobility μ eff as high as 1600 cm 2 V -1 s -1 at room temperature. A remarkable (five to eight times) increase in μ eff was observed on cooling the device to about 90 K. Through these investigations, the excellence of the properties of the anodic oxide-InP interface was demonstrated. A few problems of the oxide as a gate insulator are also presented.
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