Abstract
P + -Type buried layers of boron in silicon samples have been made by implanting boron ions of 1–3 MeV energy at doses of 1 × 10 13 −5 × 10 15 cm −2. Different annealing conditions have been investigated mainly through automatic spreading resistance probe measurements, MOS structure C-V electrical properties measurements and TEM and TED observations. It is found that not only good implanted buried layers but also good top crystalline layers were formed, and the annealing of the deep implanted layers is effective by making use of the enhanced annealing effect of double implantation. This discovery of enhanced annealing of double implantation is very useful for new applications of high energy ion implantation.
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