The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

Abstract

The resonant behaviors of spin-dependent linear AR conductance, the spin-dependent AR current, the electron occupation number and spin accumulation in the QD are theoretically investigated in the FM/QD/SC system with intradot spin-flip scattering. The novel resonant behaviors of spin-dependent AR conductance versus Fermi energy are revealed, which are rather different from the AR conductance versus the dot's energy level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that the split of the resonant peak can be induced by the competition between the coupling strengths to the FM and SC leads, the intradot spin-flip scattering, and the gate voltage. The number, the widths, and the distance of the peaks could be controlled by tuning the relevant parameters. The resonance of AR current can take place only when the energy level of QD lines up with the right lead chemical potential and blows the left lead chemical potential. The magnitude of the resonant AR current depends on the number of resonant levels involved in the Andreev tunneling process. It is also proved that the spin-flip scattering can suppress the spin accumulation effectively, and induce the spin polarization of AR conductance and AR current simultaneously. The results make us understand better the fundamental in this system, and are useful for the design of spintronic devices.