Abstract
The anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer by silicon ion implantation is investigated and a theoretical analysis is proposed. The abnormal degradation and leakage current induced by hot carrier stress on the front gate are observed. The reason is that the silicon nanoclusters formed by silicon ion implantation can capture a large number of hot electrons during the stress. The effect of silicon ion implantation depth on this anomalous degradation is also investigated. Implantation closer to the interface of top silicon and buried oxide layer leads to more metastable traps and thus to varying degrees of degradation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
