Abstract
The organic photoelectric transistors using the vacuum evaporation and sputtering process are prepared in this paper. The Cu/CuPc/Al/CuPc/ITO layer based on vertical structure is grown through a CuPc active layer. The CuPc has excellent photosensitivity and it is easy to be fabricated into Short-Channel device with vertical structure. It is shown that I-V characteristics of organic photoelectric transistors are unsaturated. In this experiment the light source is the Bromine-tungsten lamp in the range of 300nm to 800nm. When the light source irradiates the device with Vec=2V, the operating current is 0.155μA which has been increased to 2.3-3.6 times as compared with the dark state. Therefore, the amplification coefficient of output current Iecis increasing in irradiation with smaller base voltage. As a result, the current amplification coefficient β is 5.25 and 2.14 with illumination and without illumination respectively.
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