Abstract
The electric field crosstalk of microstrips on a GaAs integrated circuit was calculated by static state finite difference method. The crosstalk was also measured by a practical internal electro-optic sampler. The principles of electro-optic sampling and finite difference method were introduced. When the width of active electrode was 5 /spl mu/m and the distance between the two electrodes was 10 /spl mu/m, the practical measured and theory crosstalk value was about 40% and 46%, respectively.
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