Abstract
We fabricate and investigate the photoelectrical characterization of PbSe QDs FEpTs Field Effect photo Transistors in lateral (LQFEpT) and vertical architectures (VQFEpT) respectively. Both LQFEpT and VQFEpT apply PbSe quantum dots as active layer, with different channel length of 0.1mm and 678nm respectively. The VQFEpT apply Au/Ag nanowires (NWs) as source transparent electrode connecting with Au source electrode. The ambipolar operation of both FEpTs show low power consumption, delivering high drain current at VSD = VG = ± 4 V. The VQFEpT exhibit higher photocurrent up to 4mA, three orders magnitude higher than that in LQFEpTs (16μA), owing to the superior carrier transportion in the shorter channel. As a result, higher photo responsivity (8×104A/W), specific detectivity (2×1012Jones) and gain (1.3× 105) are achieved in VQFEpT. The all-solution processing vertical architecture provide a convenient way for IR photo detectors with high performances.
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