High photoresponsivity in CH3NH3PbI3-XClx perovskite vertical field effect photo transistors

Abstract

The synthesis of organic-inorganic hybrid perovskites has greatly facilitated the development of high-performance optoelectronic devices such as photovoltaics, light-emitting diodes, lasers, and photodetectors. We report a CH3NH3PbI3-xClx vertical-structure field-effect phototransistor (VFEPT) using Au/Ag NWs as transparent source electrode (TSE) and exhibiting wideband absorption in the 380 to 800 nm range. Due to the ultra-short channel (78 nm) of VFEPT, multiple circulating holes in laser-induced electron-hole pairs, thus achieving excellent photoconductivity. We further tested the photoelectric performance of VFEPT, which showed that the device had the responsivity (R) is 82.99A/W, the external quantum efficiency (EQE) is 3.3 × 104% and the specific detectivity (D*) is 1.86 × 1012 Jones at VG = -2V, VSD = −5V. When VG = 2.5 V, VSD = 5 V, R reaches 109.15 A/W, EQE reaches 3.3 × 104% and D* reaches 2.45 × 1012 Jones. Organic-inorganic hybrid perovskites provide a new approach for high-performance vertical-structured ultra-short channel perovskite photodetectors.