Abstract
We report the Al-doping contents dependence of crystal growth and energy band structure in Al:ZnO thin films on the quartz substrates by the sol–gel method. As the Al contents increase, the Al-doping in the lattice reveals a maximum while the dopant is 2 mol%. It is inferred that the doping deterioration attributes to the decrease of grain size, which might be induced by the pinning effect of amorphous Al 2O 3 on ZnO grains boundary. The blueshifts of optical bandgap imply the quantum size effect of crystallites and the Burstein–Moss shifts in photoluminescence spectra indicate the heavy doping level for all samples.
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