Abstract
The AC-bias stress was applied at 2um gate length a-Si:H TFT and 4.2um gate length a-Si:H TFT respectively in order to investigate the stability of short channel a-Si:H TFT. The peak voltage of applied AC bias was 7.5 V and the base voltage of it was -7.5 V respectively. The AC bias stress was applied for 100,000 seconds at 60oC. The VTH of short channel a-Si:H TFT was decreased about 0.34V after the AC bias stress while that of long channel a-Si:H TFT was increased about 0.20V. Because the VTH of short channel a-Si:H TFT was less increased than that of long channel a-Si:H TFT during on state period the increase of short channel a-Si:H TFT was compensated more efficiently than that of long channel one at off sate period. Our experimental result showed that the AC stability of short channel a-Si:H TFT was better than that of long channel one.
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