Abstract

In this study the ac (alternating current) small-signal electrical data in the frequency range 5 Hz ≤ f ≤ 13 MHz are obtained for the multi-layered thermoelectric (TE) devices to extract underlying operative mechanisms via an equivalent circuit model. This model is developed from the complex plane plots in conjunction with the Bode plot. It is observed that the inductive behavior is prevalent for both unbombarded and bombarded TE devices regardless of the doses as both types are observed as somewhat weak in thermoelectric properties. The bombarded multi-layered devices followed a systematic pattern in ac behavior via semicircular relaxation both in the impedance and admittance planes for the same measured data. This pattern is attributed to the transition from one lumped behavior to two distinct mechanisms. It is observed that the␣conductive nature of the equivalent circuit model via non-blocking (non-capacitive) elements, attributed to the underlying operative electrical paths between the two opposite electrodes across the multi-layered device exists, satisfying direct current conditions of the equivalent circuit model. The inductive behavior at high frequencies originates from the conductive aspect of the lumped response of the device in addition to the contribution of the electrode leads. Thus, the proposed equivalent circuit model contains external inductance that verifies a meaningful representation of the multi-layered TE device, though weak in thermoelectric properties.

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