Abstract
ABSTRACTWe evaluated the characteristics of a-Si:H/a-SiNx:H thin film transistors (TFTs), and of separately deposited a-Si:H films, as functions of the a-Si:H deposition power in a high-rate, large-area, 40 MHz PE-CVD system. TFT performance and a-Si:H film properties improve with decreasing power density and deposition rate. However, low defect density a-Si:H material was deposited at rates as high as 1500 Å/min. TFTs with gate nitride deposited at 1000 A/min show excellent I-V characteristics when the a-Si:H deposition power is low enough. The TFT electron mobility in the linear regime correlates well with the Urbach energy of the a-Si:H films, suggesting that the quality of the a-Si: H controls the performance of our TFTs.
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