Abstract
Abstract Pb(ZrxTi1–x)O3 (PZT), Bi4Ti3O12 and BaTiO3 films as well as SrTiO3 films are considered for nonvolatile memory applications and high density dynamic random access memories. These perovskite systems are frequently deposited by a sol-gel or MOD technique. Processing and the properties of the thin films are summarized.
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