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Abstract
A series of Ba2NdFeNb4O15 thin films with a thickness from 75 nm to 1 μm on Si(001) substrates was fabricated by RF-cathode sputtering. The surface of the films was smooth and uniform. Ba2NdFeNb4O15/Si(001) thin films were polycrystalline with the c-axis texture. A significant increase in the lattice parameter c of the films was found in comparison with the bulk sample. It was found that an external field action could create polarized regions in both thin and thick films, but rapid relaxation of these regions took place.
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