Abstract

A simple process for improving texture and electrical mobility of polycrystalline films is described. The technique involves annealing the film in a controlled temperature gradient and produces chainlike structures of impurity-free grains; dopants and other defects are confined to grain boundaries. The diffusion of impurities, as well as self-diffusion of the host lattice, produces a combing effect and causes grain reorientation in the annealed films. The electrical sheet conductance increases with increasing temperature gradient but attains an optimum value, above which the conductance falls due to microcracking of the film.

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