Abstract
We present a study of the radiation damages induced by neutrons in a large batch of microstrip silicon sensors and test structures. The paper first describes the context of the research in the framework of an international collaboration preparing an experiment near a high intensity proton collider. The radiation hardness of the silicon sensors is essential to withstand the high neutron fluence to be encountered near the interaction point. The structure of the sensors is explained in a second section. The generation of the neutron beam and its characterization is briefly given. The last part shows systematic comparisons of some electrical parameters of the sensors before and after irradiation by neutrons. It also compares the relative behavior between batches from different manufacturers.
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