Abstract
This paper describes the performance of a prototype timing detector, based on 50 μm thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum pion beam. The dependence of the time precision on the pixel capacitance and bias voltage is investigated in this paper. A timing precision from 30 ps to 100 ps (RMS), depending on the pixel capacitance, has been measured at a bias voltage of 180 V.
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