Abstract
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. The sensor features a small collection diode, which is essential for achieving a low input capacitance. The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC). Its design characteristics are of broad interest beyond CLIC, for HL-LHC tracking detector upgrades. It is produced in two different pixel flavours: one with a continuous deep n-type implant, and one with a segmented n-type implant to ensure fast charge collection. The pixel matrix consists of 16 × 128 detection channels measuring 300μm×30μm. Each detection channel is segmented into eight sub-pixels to reduce the amount of digital circuity while maintaining a small collection electrode pitch. This paper presents the characterisation results of the CLICTD sensor in a particle beam. The different pixel flavours are compared in detail by using the simultaneous time-over-threshold and time-of-arrival measurement functionalities. Most notably, a spatial resolution down to (4.6±0.2)μm is measured. A time resolution down to (5.8±0.1)ns is observed, after applying an offline time-walk correction using the pixel-charge information. The hit detection efficiency is found to be well above 99.7% for thresholds of the order of several hundred electrons.
Highlights
The CLICTD sensor was designed as a technology demonstrator in the context of the tracking detector studies for the Compact Linear Collider (CLIC)
This paper presents the characterisation results of the CLICTD sensor in a particle beam
The CLIC tracker detector (CLICTD) is a monolithic high-resistivity (HR) CMOS sensor targeting the requirements of the tracking detector for a future Higgs factory such as the Compact Linear Collider (CLIC) [1]
Summary
The CLIC tracker detector (CLICTD) is a monolithic high-resistivity (HR) CMOS sensor targeting the requirements of the tracking detector for a future Higgs factory such as the Compact Linear Collider (CLIC) [1]. 5 ns, a hit detection efficiency > 99.7 % and a maximum material budget of 1–2% X0 per detector layer. Various design features of the 180 nm CMOS imaging process have been successfully tested within the framework of the ALPIDE sensor development for the ALICE Inner Tracking System upgrade [5, 6]. Modifications to the sensor design have been introduced in order to achieve full lateral depletion of the epitaxial layer [7] and to enhance the lateral field for additional acceleration of the charge collection [8]. The CLICTD sensor is fabricated in two different pixel flavours affecting the charge collection. February 3, 2021 mance of the two pixel flavours is compared
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