The CLICTD Monolithic CMOS Sensor

Katharina Dort

doi:10.7566/jpscp.34.010019

Abstract

CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. The sensor was developed to target the requirements for the tracking detector of the proposed future Compact Linear Collider (CLIC). Most notably, a temporal resolution of a few nanoseconds and a spatial resolution below 7 microns are demanded. In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 microns to minimize the material budget) and inclined particle tracks.

Highlights

The Compact Linear Collider (CLIC) tracker detector (CLICTD) is a pixelated monolithic CMOS sensor featuring a high resistivity epitaxial layer and a small collection electrode for reduced sensor capacitance
The reverse bias voltage applied to CLICTD has an effect on the sensor as well as on the front-end performance: On the one hand, the operation of the front-end is more challenging at high absolute bias voltages due to a slow-down of the on-channel NMOS transistors [8]
Characterisation results of the monolithic CMOS sensor CLICTD in beam tests have been presented with focus on different operation voltages and inclined particle tracks

Summary

The CLICTD Monolithic CMOS Sensor

CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is optimised for fast charge collection and high spatial resolution. A temporal resolution of a few nanoseconds and a spatial resolution below 7 μm are demanded In this contribution, the sensor performance measured in beam tests is presented with emphasis on recent studies using assemblies with different thicknesses (down to 50 μm to minimize the material budget) and inclined particle tracks

Introduction

Sensor process

Performance in Particle Beams

Estimation of Active Depth

Findings

Summary and Outlook