Ternary-source vapor-phase deposition of CH3NH3PbI3 polycrystalline thin films using CH3NH2 and HI gas sources with PbI2 solid source

Abstract

We have investigated reaction processes of vacuum deposition of CH3NH3PbI3 using CH3NH3I and PbI2 solid sources. CH3NH3I decomposes to CH3NH2 and HI at around 100 °C under usual vacuum deposition conditions. Therefore, CH3NH3I solid source can be replaced with CH3NH2 and HI gas sources. We have demonstrated that high-quality CH3NH3PbI3 polycrystalline thin films can be fabricated by ternary-source vacuum deposition using CH3NH2 and HI gas sources combined with PbI2 solid source. The newly developed ternary-source vapor-phase deposition technique is useful because of its high stability and controllability in deposition rates.