Ternary encoder and decoder designs in RRAM and CNTFET technologies

Abstract

A possible way for the very large scale integration (VLSI) industry to keep up with the pace of high density, computational capability, and energy efficiency is to look into some technologies ahead of binary logic. In recent years, multiple-valued logic (MVL) has caught the notable attention of digital system designers. The carbon nanotube field effect transistor (CNTFET) has been exclusively used for the implementation of MVL circuits. Resistive random-access memory (RRAM) offers a very durable option for executing the MVL due to its capability of storing various resistance states in one cell. In this paper, a ternary 9:2 encoder and a ternary 2:9 decoder have been designed and simulated using the proposed RRAM-based ternary logic gates with standard 32nm CNTFETs. In comparison to other ternary circuits in the literature, the proposed CNTFET RRAM-based ternary logic circuits show less power consumption, delay, and power delay product (PDP). The power of the CNTFET RRAM-based proposed ternary inverter (TI), ternary NAND (TNAND), and ternary NOR (TNOR) is 32.78%, 51.48%, and 24.14% less than the lowest power of the other designs under consideration. The PVT variations and reliability of the proposed encoder and decoder circuits have also been studied.