Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1−xN quantum dots

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The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron–phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/Al x Ga 1 − x N onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron–phonon interactions in GaN/Al x Ga 1 − x N onion-like quantum dots. The frequencies of interface optical phonons and electron–phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range. • The random-element isodisplacement model and dielectric continuum model are used. • The ternary effects on IO phonons in onion-like GaN/Al x Ga 1 − x N QDs are studied. • The ternary effects on electron–IO phonon coupling in QDs are studied.