Ternary alloyed HgCdTe nanocrystals for short-wave and mid-wave infrared region optoelectronic applications

Abstract

Semiconductor quantum dots (QDs) are emerging as the forefront alternative for the conventional imaging technology, particularly in infrared region from near infrared (0.75–1.4 μm) to long-wave infrared (8–14 μm) region. A handful of materials are explored for mid infrared imaging QDs and they are all invariably binary semiconductor compounds. Ternary alloyed quantum dots in many previous cases have shown properties that are unique and better than parent binary compounds. In this work, we have synthesized ternary alloyed HgCdTe quantum dots and studied their photophysical properties. Previously studied ternary alloyed HgCdTe CQDs absorb and emit in regions limited upto near-infrared region. We have tuned the excitonic absorption of HgCdTe QDs in the range of 2.2–5 μm, where addition of cadmium clearly showed blueshift in excitonic peak as compared to that of HgTe QDs. Structural properties are studied by TEM, XRD & XPS techniques. Electrical behaviour is studied by measuring I-V, I-V-T curves. Photodetectors are fabricated in photoconductive geometry showing promising photo-response under visible (532 nm) and NIR (810 nm, 1550 nm) excitation. Responsivity of the devices is in the order of 1 mA W−1 at 1 V bias and show good linearity over irradiance range of 0.025 and 2.5 W cm−2. These results pave the way for development of next generation cost-effective short-wave and mid-wave infrared region optoelectronic devices based on narrow bandgap HgCdTe nanocrystals.