Abstract
We report on the observation of efficient terahertz radiation from the surface of CuInSe2 excited by femtosecond laser pulses. Terahertz radiation emitted by polycrystalline CuInSe2 layers manufactured by using electrodeposition technology was as powerful as the signals radiated by single-crystalline semiconductor surfaces. It has been found that terahertz radiation efficiency is critically dependent on the stoichiometry of the CuInSe2 layers. The results of a double-pulse excitation experiment have indicated that terahertz radiation from the photoexcited surfaces of CuInSe2 samples was caused by the presence of a built-in electrical field at those surfaces.
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