Abstract
We present a theoretical study on optoelectronic properties of n-type monolayer MoS2 under long-wavelength light radiation. The optical conductance for such material system is evaluated using the energy-balance equation derived from the Boltzmann equation in the presence of linearly polarized radiation field. For n-type monolayer MoS2, the optical absorption in terahertz bandwidth can be achieved via intra spin-conserved transitions and inter spin-flip transitions at K and K′ valleys. More importantly, we find that there is a terahertz absorption peak in the radiation frequency range 2–10 THz. The intensity and width of this absorption peak depend sensitively on temperature and the position of the peak can be tuned via changing the electron density. This study shows that n-type monolayer MoS2 can be applied as frequency tunable THz optical and optoelectrical devices.
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