Abstract
We study the laser regime of terahertz (THz) emission from a semiconductor microcavity in the strong coupling regime, where optical transitions between upper and lower exciton-polariton modes are allowed due to the mixing of the upper mode with one of the dark exciton states. Using a system of master-Boltzmann equations describing both polariton modes and the THz mode, we calculate the first and second order coherences and the spectral shape of THz emission. This analysis shows that THz lasing in microcavities is possible provided that the system is embedded in a good THz cavity, that the optical (polariton) lasing condition is fulfilled and if the depletion of the upper polariton mode due to acoustic phonon assisted relaxation processes is reduced. This latter condition is likely to be realised in pillar microcavities, which seem to be the most suitable candidates for realisation of a THz laser.
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