Abstract
The terahertz part of the electromagnetic spectrum marks a decade wide gap in semiconductor technology between transport-based electronics and quantum transition based photonics. As such, it appears that potential, future solid-state oscillators, that will fill this gap, will marry transport and quantum transitions in semiconductor quantum structures. Fundamental limits of quantum transport devices like resonant tunneling diodes are discussed. Monolithic power combining leads naturally to multiquantum well superlattices in uniform electric fields, which are recognized as Bloch oscillators. Multi-quantum well superlattices are integrated into quasi-optical arrays and loaded into terahertz cavities driven by radiation from the UCSB free-electron lasers in order to measure the change in terahertz dynamical conductance under electrical bias. Electric field domain formation prevents the material from presenting the anticipated terahertz gain required for an oscillator.
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