Terahertz detection in zero-bias InAs self-switching diodes at room temperature

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RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2–315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz½ was observed for the SSD when driven by a 50 Ω source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz½ were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz.