Abstract
The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5nm has been fabricated by hetero-layer transfer technique with highly selective wet etching. According to Raman spectroscopy, UTB-SiGe layer with Ge fraction of 67% and +1% partially tensile strain was transferred onto the SiO2/Si host substrate without the strain degradation. To present the feasibility of UTB-SGOI substrate, a well-behaved performance of 2-μm-gate-length normally off UTB-SGOI nMOSFET has also been demonstrated.
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