Abstract
The research paper describes the technology of temporary bonding for carrying out technological operations with semiconductor wafers with a diameter of 100 mm or less on equipment for a wafer diameter of 150 mm. The main technological processes for manufacturing a silicon substrate 300 μm thick with blind microholes (vertical grooves) 100 μm in diameter using temporary bonding technology are presented. Investigations of the elemental analysis of the formed structure of metals in blind microholes were carried out on the basis of spectral ellipsometry. Metallization was carried out by a combination of methods of atomic layer and magnetron sputtering, chemical and electrochemical deposition. The effect of expansion of the groove walls during deep plasma-chemical etching of silicon is shown. The developed technology of temporary bonding is intended for the production of silicon interposers with TSV holes, 2.5D and 3D microassemblies.
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