Abstract
Temporally resolved growth of InP on patterned substrates with opening off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral overgrowth and vertical growth were analysed. The lateral growth rate was observed to be strongly dependent on the orientation of the openings. The maximum lateral growth rate was achieved at 30/spl deg/ and 60/spl deg/ off [110] direction. The vertical growth rate was relatively constant, independent of the opening orientation. The optimum lateral overgrowth condition of InP was explored, which may be used for heteroepitaxy of InP on Si.
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