Abstract
The dwell time is calculated for electron in a novel magnetic nanostructure with zero average magnetic fields, which is realized experimentally by constructing three nanosized ferromagnetic stripes on top and bottom of the InAs/AlxIn1-xAs heterostructure. Although structural magnetic fields are averagely equal to naught, the dwell time is still dependent on electron spins owing to the spin-field interaction. Due to the dependence of effective potential experienced by electron on structural parameters (such as magnetic strength and device width), spin-polarized dwell time can be conveniently modulated by reasonably fabricating ferromagnetic stripes. As a result, this novel magnetic microstructure can act as a temporal electron-spin splitter for spintronic device applications.
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