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Abstract
The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to 8 × 1015 1 MeV neq cm−2. The sensors have been tested with a beam of charged particles in two different configurations, perpendicular to and almost parallel to the incident beam. The second approach, known as the grazing angles method, is shown to be a powerful method to investigate not only the charge collection, but also the time-to-threshold properties as a function of the depth at which the charges are liberated.
Highlights
: The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to 8 × 1015 1 MeV neq cm−2
The prototypes are placed perpendicular to the incident beam, the charge is liberated along the thickness of the sensor allowing for a direct measurement of the resolution per pixel
The resolution is dominated by contributions from the ASIC, with comparable contributions from jitter, to-Digital Converter (TDC) binning and different time offsets within the pixel matrix [19]
Summary
The timing performance is determined using a particle beam with two complementary methods: at normal incidence and with a grazing angle [2, 3] approach. The depletion depth of planar sensors can be precisely determined using the grazing angle technique [4]. It has been applied in charge diffusion studies in silicon [5] and to perform intrinsic spatial resolution studies [6]. The grazing angle technique has been further developed to study the time properties of the sensors as a function of depth. A complementary technique for studying sensor properties as a function of depth is the transient current technique (TCT) [7,8,9], which provides a characterisation and visualisation of the electric field distribution
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