Temperature-Related Electronic Low-Lying States in Different Shapes In.1Ga.9N/GaN Double Quantum Wells under Size Effects

Abstract

In this paper, we report the electronic states of hydrogenic impurity in InGaN/GaN double quantum wells (DQWs) with different shapes using a numerical procedure within the effective mass approximation. The effects of temperature, impurity position and size on the 1S-, 2S- and 2P-low-lying states are investigated for rectangular, parabolic and triangular finite potential confinements. Our results reveal that the binding energy versus the well width displays a maximum value around the effective Bohr radius and a larger value is obtained for rectangular compared to parabolic and triangular profiles. Moreover, regardless the size and impurity’s position, it is found that the main impact of the temperature is to shrink the binding energy. It is obtained that the binding energy drop is about 3.48 meV for rectangular and 4.26 meV for both parabolic and triangular profiles. Moreover, as the impurity is moved from the right barrier center to the structure center, the 1S-binding energy improvement is about 77.6 % in rectangular whereas it exceeds 91.4 % for other profiles. It is established that the binding energy can be easily modulated by adjusting the temperature, structure size and impurity's position. The results we obtained agree quite well with the findings.
 HIGHLIGHTS
 
 The maximum binding energy is obtained around the effective Bohr radius
 The binding energy is higher for rectangular shape compared to parabolic and triangular ones
 The main impact of the temperature is to shrink the binding energy
 The binding energy is improved with displacing the impurity toward the structure center