Abstract
The ground state binding energy of a hydrogenic impurity in the double quantum well is calculated including the effects of the image charges and the difference of the electron effective masses. The dependence of the binding energy on the impurity position and on the thickness of the well and the barrier is investigated for GaAs-Ga 1- x Al x As double quantum wells. The numerical results show a large influence of the image charges on the impurity binding energy, especially in the case of the thinner well thickness.
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