Abstract
Temperature‐dependent polarized photoluminescence from anisotropically strained c‐plane InGaN/GaN multiple quantum wells on stripe‐shaped cavity‐engineered sapphire substrate is theoretically and experimentally investigated. Polarization ratios decrease from 0.98 to 0.74, and emission peak shifts increase from 0 to 50.9 meV with increasing temperature from 10 to 300 K, respectively. Theoretical calculations based on k·p perturbation theory reveal that the temperature dependence of polarized optical behaviors is attributed to the modified valence band structures and hole distributions in each subband. Theoretical results are in good agreement with the experimental results over temperature range from 10 to 300 K, providing in‐depth understanding for the strain‐induced valence band modification of III‐nitride semiconductors.
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