Abstract
Temperature dependence of the near-bandedge photoluminescence (PL) was studied on a 10-nm Ga0.68In0.32N0.01As0.99/GaAs single quantum well (SQW) prepared by molecular-beam epitaxy for both the as-grown and the rapid-thermal-annealed (RTA) samples. Full width at half maximum (FWHM) value was 18–26 meV (for 80–280 K) and 11–19 meV (for 8–280 K) for the as-grown and the RTA samples, respectively. The FWHM of the RTA sample is the smallest among the samples prepared before and those reported so far. At low temperature (8–50 K), a PL peak due to the localized level was observed for the as-grown sample. However, no such peak was observed for the RTA sample. The PL intensity of the RTA sample was about 10–100 times larger than that of similar SQWs grown previously. These results indicate that the crystal quality of the RTA GaInNAs SQW used in this study is both outstanding and comparable with that of the corresponding GaInAs SQW.
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