Abstract
The temperature dependence of the fundamental absorption edge in free-standing “epitaxial” InP layers has been experimentally studied. The integral exciton absorption coefficient K(T) exhibits an increase at low temperatures, which is explained in terms of the exciton-polariton mechanism of light transfer in semi-conductor crystals with spatial dispersion. A critical temperature (T c = 200 K), above which the integral absorption becomes constant, has been experimentally determined, and the corresponding critical decay parameter (Γc = 0.341 meV), longitudinal-transverse splitting (ħωLT = 0.175 meV), and oscillator strength of the exciton transition (β = 0.237 × 10−4) have been calculated. The temperature dependence of the true dissipative decay has been determined.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
