Abstract
Abstract This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the fundamental absorption edge in semiconductor crystals with spatial dispersion. The results of experimental studies of temperature-dependent total exciton absorption are generalized. The experimentally determined critical temperatures above which total absorption becomes constant, the corresponding critical damping parameter, and longitudinal–transverse splittings for the studied semiconductors CdTe, GaAs, InP, ZnSe, and ZnTe are presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
