Abstract
A series of In0.36Ga0.64As/GaAs single quantum wells were grown by molecular beam epitaxy to investigate the dependence of the critical layer thickness (CLT) on growth temperature. The layers were grown between 410 and 590 °C. Photoluminescence was then used to determine the CLT as the onset of three-dimensional growth which occurs at 15 Å for 570 °C and at 55 Å when grown at 470 °C. Our results indicate a strong and nearly linear temperature dependence for the CLT.
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